Simple accurate model of silicon donor arrays

Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible to form donor arrays for quantum computation or simulation applications. However, the multivalley character conduction band combines central cell corrections states convert small atomic scale imperfections placement into strong interdonor hybridization disorder. We present a simple model that is able account accurately, and use assess impact positional disorder on array properties both itinerant localized limits. Our results show simulate strongly disordered one-dimensional electrons.